Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics
The initial stage of the project involved the development of a new ultra-fast switching (UFS) method for the measurement of the bias temperature instability (BTI) phenomenon in state-of-the-art MOSFETs. This is followed by a systematic and detailed investigation on the negative-bias temperature inst...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/51195 |