Characterisation of ZnO thin films produced by filtered cathodic vacuum arc technique
ZnO thin films were deposited on (100)Si substrates using filtered cathodic vacuum arc (FCVA) technique at various temperature (room temperature to 420 degree) and with different nitrogen to oxygen flow rate ratios (01. to 0.5) at 200 degree celsius.
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/5124 |
| Summary: | ZnO thin films were deposited on (100)Si substrates using filtered cathodic vacuum arc (FCVA) technique at various temperature (room temperature to 420 degree) and with different nitrogen to oxygen flow rate ratios (01. to 0.5) at 200 degree celsius. |
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