Narrow bandgap semiconductors for infrared photodetection

Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include n...

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Bibliographic Details
Main Author: Bai, Lu
Other Authors: Zhang Dao Hua
Format: Final Year Project (FYP)
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/53249
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author Bai, Lu
author2 Zhang Dao Hua
author_facet Zhang Dao Hua
Bai, Lu
author_sort Bai, Lu
collection NTU
description Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include night vision, rifle sight, surveillance, missile guidance, tracking, and interceptors. IR FPAs with high sensitivity, high uniformity, large format, and flexible wavelength are needed from the short wavelength infrared (SWIR) to very long wavelength infrared (VLWIR) spectral range. High sensitivity is desirable for advanced IR sensor systems and the stability, reproducibility, yield, cost, maintenance, and manufacturability are also very important issues. This project aims at characterizing the narrow bandgap materials and optimizes their properties suitable for infrared photodetection.
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spelling ntu-10356/532492019-12-10T10:53:37Z Narrow bandgap semiconductors for infrared photodetection Bai, Lu Zhang Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include night vision, rifle sight, surveillance, missile guidance, tracking, and interceptors. IR FPAs with high sensitivity, high uniformity, large format, and flexible wavelength are needed from the short wavelength infrared (SWIR) to very long wavelength infrared (VLWIR) spectral range. High sensitivity is desirable for advanced IR sensor systems and the stability, reproducibility, yield, cost, maintenance, and manufacturability are also very important issues. This project aims at characterizing the narrow bandgap materials and optimizes their properties suitable for infrared photodetection. Bachelor of Engineering 2013-05-31T02:26:16Z 2013-05-31T02:26:16Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/53249 en Nanyang Technological University 56 p. application/msword
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Bai, Lu
Narrow bandgap semiconductors for infrared photodetection
title Narrow bandgap semiconductors for infrared photodetection
title_full Narrow bandgap semiconductors for infrared photodetection
title_fullStr Narrow bandgap semiconductors for infrared photodetection
title_full_unstemmed Narrow bandgap semiconductors for infrared photodetection
title_short Narrow bandgap semiconductors for infrared photodetection
title_sort narrow bandgap semiconductors for infrared photodetection
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
url http://hdl.handle.net/10356/53249
work_keys_str_mv AT bailu narrowbandgapsemiconductorsforinfraredphotodetection