Narrow bandgap semiconductors for infrared photodetection
Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include n...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/53249 |
| _version_ | 1826128432501620736 |
|---|---|
| author | Bai, Lu |
| author2 | Zhang Dao Hua |
| author_facet | Zhang Dao Hua Bai, Lu |
| author_sort | Bai, Lu |
| collection | NTU |
| description | Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include night vision, rifle sight, surveillance, missile guidance, tracking, and interceptors. IR FPAs with high sensitivity, high uniformity, large format, and flexible wavelength are needed from the short wavelength infrared (SWIR) to very long wavelength infrared (VLWIR) spectral range. High sensitivity is desirable for advanced IR sensor systems and the stability, reproducibility, yield, cost, maintenance, and manufacturability are also very important issues. This project aims at characterizing the narrow bandgap materials and optimizes their properties suitable for infrared photodetection. |
| first_indexed | 2024-10-01T07:24:32Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/53249 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:24:32Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/532492019-12-10T10:53:37Z Narrow bandgap semiconductors for infrared photodetection Bai, Lu Zhang Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Infrared (IR) detectors are very important in both military and civilian applications and have been widely investigated over the past century. Commercial applications of IR FPAs could cover medical, fire control, surveillance and driver’s vision enhancement. The military applications could include night vision, rifle sight, surveillance, missile guidance, tracking, and interceptors. IR FPAs with high sensitivity, high uniformity, large format, and flexible wavelength are needed from the short wavelength infrared (SWIR) to very long wavelength infrared (VLWIR) spectral range. High sensitivity is desirable for advanced IR sensor systems and the stability, reproducibility, yield, cost, maintenance, and manufacturability are also very important issues. This project aims at characterizing the narrow bandgap materials and optimizes their properties suitable for infrared photodetection. Bachelor of Engineering 2013-05-31T02:26:16Z 2013-05-31T02:26:16Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/53249 en Nanyang Technological University 56 p. application/msword |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Bai, Lu Narrow bandgap semiconductors for infrared photodetection |
| title | Narrow bandgap semiconductors for infrared photodetection |
| title_full | Narrow bandgap semiconductors for infrared photodetection |
| title_fullStr | Narrow bandgap semiconductors for infrared photodetection |
| title_full_unstemmed | Narrow bandgap semiconductors for infrared photodetection |
| title_short | Narrow bandgap semiconductors for infrared photodetection |
| title_sort | narrow bandgap semiconductors for infrared photodetection |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | http://hdl.handle.net/10356/53249 |
| work_keys_str_mv | AT bailu narrowbandgapsemiconductorsforinfraredphotodetection |