A study of the bias-temperature instability problem in advanced gate stacks
Negative Bias Temperature Instability (NBTI) on thin and thick PMOSFET with SiON oxide was examined by stressing the devices under different conditions to observe the recovery behavior of NBTI. In this project, experiments were carried out to study the frequency dependent, temperature dependent and...
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| Format: | Final Year Project (FYP) |
| Sprache: | English |
| Veröffentlicht: |
2013
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| Online Zugang: | http://hdl.handle.net/10356/53359 |