Study of chemical vapor deposited carbon nanotubes as electrical interconnect
This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/53535 |
| _version_ | 1824455886900297728 |
|---|---|
| author | Ng, Chou Shing |
| author2 | Tay Beng Kang |
| author_facet | Tay Beng Kang Ng, Chou Shing |
| author_sort | Ng, Chou Shing |
| collection | NTU |
| description | This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films. |
| first_indexed | 2025-02-19T03:45:20Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/53535 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:45:20Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/535352023-07-07T16:03:59Z Study of chemical vapor deposited carbon nanotubes as electrical interconnect Ng, Chou Shing Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films. Bachelor of Engineering 2013-06-05T01:27:41Z 2013-06-05T01:27:41Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/53535 en Nanyang Technological University 74 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ng, Chou Shing Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title | Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title_full | Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title_fullStr | Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title_full_unstemmed | Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title_short | Study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| title_sort | study of chemical vapor deposited carbon nanotubes as electrical interconnect |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/53535 |
| work_keys_str_mv | AT ngchoushing studyofchemicalvapordepositedcarbonnanotubesaselectricalinterconnect |