Nanoscale characterization and analysis of localized degradation and breakdown of high-k dielectric stacks

Degradation and breakdown of high-κ (HK) dielectrics in advanced complementary metal-oxide-semiconductor (CMOS) technology node is one of the major challenges, due to its polycrystalline microstructure upon post-deposition annealing. Grain boundaries (GBs) in polycrystalline HK dielectrics with a hi...

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Detaylı Bibliyografya
Yazar: Shubhakar.
Diğer Yazarlar: Pey Kin Leong
Materyal Türü: Tez
Dil:English
Baskı/Yayın Bilgisi: 2013
Konular:
Online Erişim:http://hdl.handle.net/10356/53914

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