Future oxide-based resistive flash memories
DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertainty in continued scaling for increased density and performance. Amongst emerging alternative technologies, Resistive Random Access Memory (RRAM) with its high speed and ability to scale further downwar...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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2013
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| Online Access: | http://hdl.handle.net/10356/54465 |
| _version_ | 1824454808508039168 |
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| author | Wu, Wenze. |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Wu, Wenze. |
| author_sort | Wu, Wenze. |
| collection | NTU |
| description | DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertainty in continued scaling for increased density and performance. Amongst emerging alternative technologies, Resistive Random Access Memory (RRAM) with its high speed and ability to scale further downwards presents itself as a possible candidate to replace DRAM. However the current best RRAM samples slightly fall short of the required endurance, and the device's behavior outside laboratory test setups still has many unknowns. This project looks at possible methods to increase to increase an RRAM device's endurance via external parameters, and to determine if an RRAM's behavior is suitable for use as DRAM's replacement. |
| first_indexed | 2025-02-19T03:28:12Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/54465 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:28:12Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/544652023-07-07T16:45:27Z Future oxide-based resistive flash memories Wu, Wenze. Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertainty in continued scaling for increased density and performance. Amongst emerging alternative technologies, Resistive Random Access Memory (RRAM) with its high speed and ability to scale further downwards presents itself as a possible candidate to replace DRAM. However the current best RRAM samples slightly fall short of the required endurance, and the device's behavior outside laboratory test setups still has many unknowns. This project looks at possible methods to increase to increase an RRAM device's endurance via external parameters, and to determine if an RRAM's behavior is suitable for use as DRAM's replacement. Bachelor of Engineering 2013-06-20T08:31:18Z 2013-06-20T08:31:18Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/54465 en Nanyang Technological University 58 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Wu, Wenze. Future oxide-based resistive flash memories |
| title | Future oxide-based resistive flash memories |
| title_full | Future oxide-based resistive flash memories |
| title_fullStr | Future oxide-based resistive flash memories |
| title_full_unstemmed | Future oxide-based resistive flash memories |
| title_short | Future oxide-based resistive flash memories |
| title_sort | future oxide based resistive flash memories |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/54465 |
| work_keys_str_mv | AT wuwenze futureoxidebasedresistiveflashmemories |