Electrical properties and memory applications of Al-rich Al-based dielectric thin films
An AI-rich Al203 thin film was deposited on a p-type silicon substrate by rf sputtering to form AIIAI-rich AI20 3/p-Si diodes. The current-voltage (I-V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the t...
Main Author: | Zhu, Wei |
---|---|
Other Authors: | Chen Tupei |
Format: | Thesis |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/54733 |
Similar Items
-
Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
by: Zhao, P., et al.
Published: (2010) -
Characterization and device applications of metal-dielectric nanocomposite thin films
by: Liu, Zhen
Published: (2014) -
Charging effect of Al2O3 thin films containing Al nanocrystals
by: Chen, X. B., et al.
Published: (2010) -
Thin film characterizations for resistive memory
by: Weng, Bao Bin.
Published: (2012) -
A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness
by: Li, X. D., et al.
Published: (2014)