Bias temperature instability of nano-scale silicon transistors
Negative Bias Temperature Instability (NBTI) has been a critical reliability issue for today’s sub-micron devices. It was experimentally noted that NBTI is a crucial limiting performance factor for PMOSFET. Thus, it defines that lifetime of the PMOSFET in the circuit. Under NBTI stress, the PMOSF...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/55442 |