Group IV nanowire formation and its application
This thesis presents the studies on Group IV nanowire formation and its solar cell application. In the nanowire formation part, firstly large-area arrayed Si and SiGe nanowires with Ge contents of about 16% and 29% were formed by an electrochemical etching method in an HF-AgNO3 aqueous solution. The...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/60572 |
| _version_ | 1811685279751208960 |
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| author | Wang, Xiaodong |
| author2 | Pey Kin Leong |
| author_facet | Pey Kin Leong Wang, Xiaodong |
| author_sort | Wang, Xiaodong |
| collection | NTU |
| description | This thesis presents the studies on Group IV nanowire formation and its solar cell application. In the nanowire formation part, firstly large-area arrayed Si and SiGe nanowires with Ge contents of about 16% and 29% were formed by an electrochemical etching method in an HF-AgNO3 aqueous solution. Then the effects of Ge on the electrochemical reaction rate and nanowire surface roughness were discussed. Secondly, orderly-arrayed Si and SiGe nanowires were formed by the Au-assisted electrochemical etching method combined with nanosphere lithography. SiGe nanowire heterostructure formation was also presented. In the nanowire-based solar cell application part, two solar cell structures were demonstrated with improved efficiency and in-depth analysis was presented. Firstly, highly folded Si nanowire-based p-i-n junction solar cells were formed by completely filling up the p-type Si nanowire interspaces through an intrinsic Si deposition by the low-pressure chemical vapor deposition system, followed by a phosphorus-containing spin-on-dopant diffusion to form the top n-type layer. Then the light angle of incidence effect was studied. Secondly, arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells were demonstrated. The core-shell p-n junctions were realized by the spin-on-dopant diffusion process to convert the exterior portion of the p-type nanowire into n-type forming core-shell junction. Then the parasitic series resistance effect was analyzed by constructing a circuit model. In addition, nanowire surface roughness and Au contamination, which may be limiting factors for higher efficiency, were discussed. |
| first_indexed | 2024-10-01T04:42:00Z |
| format | Thesis |
| id | ntu-10356/60572 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:42:00Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/605722020-11-01T11:30:43Z Group IV nanowire formation and its application Wang, Xiaodong Pey Kin Leong School of Electrical and Electronic Engineering Singapore-MIT Alliance Programme DRNTU::Engineering::Materials This thesis presents the studies on Group IV nanowire formation and its solar cell application. In the nanowire formation part, firstly large-area arrayed Si and SiGe nanowires with Ge contents of about 16% and 29% were formed by an electrochemical etching method in an HF-AgNO3 aqueous solution. Then the effects of Ge on the electrochemical reaction rate and nanowire surface roughness were discussed. Secondly, orderly-arrayed Si and SiGe nanowires were formed by the Au-assisted electrochemical etching method combined with nanosphere lithography. SiGe nanowire heterostructure formation was also presented. In the nanowire-based solar cell application part, two solar cell structures were demonstrated with improved efficiency and in-depth analysis was presented. Firstly, highly folded Si nanowire-based p-i-n junction solar cells were formed by completely filling up the p-type Si nanowire interspaces through an intrinsic Si deposition by the low-pressure chemical vapor deposition system, followed by a phosphorus-containing spin-on-dopant diffusion to form the top n-type layer. Then the light angle of incidence effect was studied. Secondly, arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells were demonstrated. The core-shell p-n junctions were realized by the spin-on-dopant diffusion process to convert the exterior portion of the p-type nanowire into n-type forming core-shell junction. Then the parasitic series resistance effect was analyzed by constructing a circuit model. In addition, nanowire surface roughness and Au contamination, which may be limiting factors for higher efficiency, were discussed. Doctor of Philosophy (AMM and NS) 2014-05-28T07:41:30Z 2014-05-28T07:41:30Z 2010 2010 Thesis http://hdl.handle.net/10356/60572 en 243 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Wang, Xiaodong Group IV nanowire formation and its application |
| title | Group IV nanowire formation and its application |
| title_full | Group IV nanowire formation and its application |
| title_fullStr | Group IV nanowire formation and its application |
| title_full_unstemmed | Group IV nanowire formation and its application |
| title_short | Group IV nanowire formation and its application |
| title_sort | group iv nanowire formation and its application |
| topic | DRNTU::Engineering::Materials |
| url | http://hdl.handle.net/10356/60572 |
| work_keys_str_mv | AT wangxiaodong groupivnanowireformationanditsapplication |