Monolithic integration of GAAS-to-SI by direct wafer bonding
While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence,...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/61132 |
| _version_ | 1826128155280146432 |
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| author | Yeo, Chiew Yong |
| author2 | Eugene A Fitzgerald |
| author_facet | Eugene A Fitzgerald Yeo, Chiew Yong |
| author_sort | Yeo, Chiew Yong |
| collection | NTU |
| description | While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors. |
| first_indexed | 2024-10-01T07:20:18Z |
| format | Thesis |
| id | ntu-10356/61132 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:20:18Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/611322020-11-12T08:39:11Z Monolithic integration of GAAS-to-SI by direct wafer bonding Yeo, Chiew Yong Eugene A Fitzgerald Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors. DOCTOR OF PHILOSOPHY (EEE) 2014-06-05T06:05:31Z 2014-06-05T06:05:31Z 2013 2013 Thesis Yeo, C .Y. (2013). Monolithic integration of GAAS-to-SI by direct wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/61132 10.32657/10356/61132 en 218 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Yeo, Chiew Yong Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title | Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title_full | Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title_fullStr | Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title_full_unstemmed | Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title_short | Monolithic integration of GAAS-to-SI by direct wafer bonding |
| title_sort | monolithic integration of gaas to si by direct wafer bonding |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/61132 |
| work_keys_str_mv | AT yeochiewyong monolithicintegrationofgaastosibydirectwaferbonding |