Poly-si nanowire based thin film transistors
This report compiled all the works that had been done by the author during his Final Year Project subject to fulfill the course requirement under School of Electrical and Electronic Engineering (EEE), Nanyang Technological Univeristy. It mainly consists of 1 main project and 2 sub-projects as briefl...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/10356/61996 |
| _version_ | 1826119892593541120 |
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| author | Le, Tien Thanh |
| author2 | Yu Hongyu |
| author_facet | Yu Hongyu Le, Tien Thanh |
| author_sort | Le, Tien Thanh |
| collection | NTU |
| description | This report compiled all the works that had been done by the author during his Final Year Project subject to fulfill the course requirement under School of Electrical and Electronic Engineering (EEE), Nanyang Technological Univeristy. It mainly consists of 1 main project and 2 sub-projects as briefly described below. Main project: Device fabrication and characterization of a polycrystalline silicon (poly- Si) vertical nanowire (VNW) based Thin Film Transistor (TFT). This part of the report demonstrates the fabrication process as well as device characterization of an inverter. With the NMOS to PMOS ratio of 1:1, the inverter exhibits very good performance with high drive current (~100μA/μm), good subthreshold slope (SS ~80-100mV/dec), low drain-induced barrier lowering (DIBL ~20-60mV/V) and high ION/IOFF ratio (~107). Together with good uniformity, this enables the device to be compatible for system on panel driving circuitry fabrication. CMOS compatible VNW devices could also realize 3D integration that will further improve device packing density and at the same time reduce power consumption. |
| first_indexed | 2024-10-01T05:07:33Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/61996 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:07:33Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/619962023-07-07T15:53:14Z Poly-si nanowire based thin film transistors Le, Tien Thanh Yu Hongyu School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics This report compiled all the works that had been done by the author during his Final Year Project subject to fulfill the course requirement under School of Electrical and Electronic Engineering (EEE), Nanyang Technological Univeristy. It mainly consists of 1 main project and 2 sub-projects as briefly described below. Main project: Device fabrication and characterization of a polycrystalline silicon (poly- Si) vertical nanowire (VNW) based Thin Film Transistor (TFT). This part of the report demonstrates the fabrication process as well as device characterization of an inverter. With the NMOS to PMOS ratio of 1:1, the inverter exhibits very good performance with high drive current (~100μA/μm), good subthreshold slope (SS ~80-100mV/dec), low drain-induced barrier lowering (DIBL ~20-60mV/V) and high ION/IOFF ratio (~107). Together with good uniformity, this enables the device to be compatible for system on panel driving circuitry fabrication. CMOS compatible VNW devices could also realize 3D integration that will further improve device packing density and at the same time reduce power consumption. Bachelor of Engineering 2015-01-05T02:01:40Z 2015-01-05T02:01:40Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/61996 en Nanyang Technological University 64 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Le, Tien Thanh Poly-si nanowire based thin film transistors |
| title | Poly-si nanowire based thin film transistors |
| title_full | Poly-si nanowire based thin film transistors |
| title_fullStr | Poly-si nanowire based thin film transistors |
| title_full_unstemmed | Poly-si nanowire based thin film transistors |
| title_short | Poly-si nanowire based thin film transistors |
| title_sort | poly si nanowire based thin film transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | http://hdl.handle.net/10356/61996 |
| work_keys_str_mv | AT letienthanh polysinanowirebasedthinfilmtransistors |