Electric characterization and conduction mechanism of multi-functional thin films for electronic devices

Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT...

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Main Author: Keh, Chee Xuan
Other Authors: Zhu Weiguang
Format: Final Year Project (FYP)
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/63416
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author Keh, Chee Xuan
author2 Zhu Weiguang
author_facet Zhu Weiguang
Keh, Chee Xuan
author_sort Keh, Chee Xuan
collection NTU
description Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment.
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spelling ntu-10356/634162023-07-07T17:23:21Z Electric characterization and conduction mechanism of multi-functional thin films for electronic devices Keh, Chee Xuan Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Recently, magnetoelectric multiferroics have attracted much spotlight in the field of memory devices due to the magnetoelectric effect compared to the conventional materials. In this final year project, the magnetoelectric multiferroic material Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT) was studied. The PZTFT thin films were fabricated by milling, sintering, pulsed laser deposition (PLD) technique and sputtering technique. Verification of the quality of the films was done using X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Electron Diffraction (RHEED). The high quality films were studied intensively under various conditions. Conduction mechanisms were identified and polarization hysteresis loops were measured through experiment. Bachelor of Engineering 2015-05-13T06:55:04Z 2015-05-13T06:55:04Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/63416 en Nanyang Technological University 59 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Keh, Chee Xuan
Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_full Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_fullStr Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_full_unstemmed Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_short Electric characterization and conduction mechanism of multi-functional thin films for electronic devices
title_sort electric characterization and conduction mechanism of multi functional thin films for electronic devices
topic DRNTU::Engineering::Electrical and electronic engineering
url http://hdl.handle.net/10356/63416
work_keys_str_mv AT kehcheexuan electriccharacterizationandconductionmechanismofmultifunctionalthinfilmsforelectronicdevices