Novel topology and control strategy for high speed electrical machines
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future development of electronic switches and integrated circuits particularly for the two main devices: the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (I...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/63510 |
| Summary: | The in-depth analysis of the Semiconductor Power Electronics applications are essential for future development of electronic switches and integrated circuits particularly for the two main devices: the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (IGBT) as they are able withstand extremely high voltage and current ratings which would be useful for the different types of devices with varying needs. The Single and Three phase inverters would be mentioned as well due to their importance of concepts of modulation techniques are needed for hardware design in the later part of the project. This report is focused on the literature review, performance and hardware analysis and testing criteria of the devices mentioned above. |
|---|