Current mode voltage reference

The report proposed a bandgap voltage reference circuit design to generate a low voltage reference which is independent to variations temperature, process and noise by using higher order compensation in current mode approach. The experiment on the characterization and the temperature behaviour of th...

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Bibliographic Details
Main Author: Goh, Siow Chnia
Other Authors: Siek Liter
Format: Final Year Project (FYP)
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/63567
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author Goh, Siow Chnia
author2 Siek Liter
author_facet Siek Liter
Goh, Siow Chnia
author_sort Goh, Siow Chnia
collection NTU
description The report proposed a bandgap voltage reference circuit design to generate a low voltage reference which is independent to variations temperature, process and noise by using higher order compensation in current mode approach. The experiment on the characterization and the temperature behaviour of the BJT transistor used was done and investigated and the model was effectively developed in the circuit designed under Chartered Semiconductor Manufacturing (CSM) 0.18um n-well CMOS process. The operational amplifier was designed to have a high output swing and high gain. The proposed bandgap voltage reference circuit is able to work properly under a supply voltage down to 1V. The temperature coefficient of the circuit is 5.91ppm/℃ over a wide range of temperature of -40℃ to 125℃. The power consumption is 356.976uW , the line regulation of the circuit designed was 45.2uV/V and the PSRR of the circuit is 77.23dB under normal operating condition in 300K. The operational amplifier has a relatively high gain of 79.16dB and the phase margin is around 83.82 deg. The unity bandwidth (f_T) is around 2.855MHz. All the circuit simulation is performed by using Cadence program provided by school.
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format Final Year Project (FYP)
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spelling ntu-10356/635672023-07-07T15:40:46Z Current mode voltage reference Goh, Siow Chnia Siek Liter School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The report proposed a bandgap voltage reference circuit design to generate a low voltage reference which is independent to variations temperature, process and noise by using higher order compensation in current mode approach. The experiment on the characterization and the temperature behaviour of the BJT transistor used was done and investigated and the model was effectively developed in the circuit designed under Chartered Semiconductor Manufacturing (CSM) 0.18um n-well CMOS process. The operational amplifier was designed to have a high output swing and high gain. The proposed bandgap voltage reference circuit is able to work properly under a supply voltage down to 1V. The temperature coefficient of the circuit is 5.91ppm/℃ over a wide range of temperature of -40℃ to 125℃. The power consumption is 356.976uW , the line regulation of the circuit designed was 45.2uV/V and the PSRR of the circuit is 77.23dB under normal operating condition in 300K. The operational amplifier has a relatively high gain of 79.16dB and the phase margin is around 83.82 deg. The unity bandwidth (f_T) is around 2.855MHz. All the circuit simulation is performed by using Cadence program provided by school. Bachelor of Engineering 2015-05-15T03:15:27Z 2015-05-15T03:15:27Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/63567 en Nanyang Technological University 90 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Goh, Siow Chnia
Current mode voltage reference
title Current mode voltage reference
title_full Current mode voltage reference
title_fullStr Current mode voltage reference
title_full_unstemmed Current mode voltage reference
title_short Current mode voltage reference
title_sort current mode voltage reference
topic DRNTU::Engineering::Electrical and electronic engineering
url http://hdl.handle.net/10356/63567
work_keys_str_mv AT gohsiowchnia currentmodevoltagereference