Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors
Research has revealed that transition metal dichalcogenides (TMDCs) have demonstrated a wide range of chemical, electronic, mechanical, optical and thermal properties. They are range from insulators, semimetals to semiconductors. Of which, the form receiving much attention today is the two dimension...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2015
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| Online Access: | http://hdl.handle.net/10356/64390 |
| _version_ | 1826129699677405184 |
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| author | Ngiam, Lee Hui |
| author2 | Tay Beng Kang |
| author_facet | Tay Beng Kang Ngiam, Lee Hui |
| author_sort | Ngiam, Lee Hui |
| collection | NTU |
| description | Research has revealed that transition metal dichalcogenides (TMDCs) have demonstrated a wide range of chemical, electronic, mechanical, optical and thermal properties. They are range from insulators, semimetals to semiconductors. Of which, the form receiving much attention today is the two dimensional semiconductor from this class of materials. Semiconductors from this class of materials will be useful in digital electronics and optoelectronic devices. As there are still a number of materials under this class have yet to be explored or little is known about them, this project will be focusing on one particular TMDCs material. In this project, palladium diselenides (PdSe2) will be studied. The main objective is to investigate the unique properties of PdSe2 for future development on nanoscale devices. The preparation of the material by micromechanical cleavage, fabrication of the prototype and electrical characterization will be discussed in this report. |
| first_indexed | 2024-10-01T07:44:47Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/64390 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:44:47Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/643902023-07-07T17:07:25Z Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors Ngiam, Lee Hui Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Research has revealed that transition metal dichalcogenides (TMDCs) have demonstrated a wide range of chemical, electronic, mechanical, optical and thermal properties. They are range from insulators, semimetals to semiconductors. Of which, the form receiving much attention today is the two dimensional semiconductor from this class of materials. Semiconductors from this class of materials will be useful in digital electronics and optoelectronic devices. As there are still a number of materials under this class have yet to be explored or little is known about them, this project will be focusing on one particular TMDCs material. In this project, palladium diselenides (PdSe2) will be studied. The main objective is to investigate the unique properties of PdSe2 for future development on nanoscale devices. The preparation of the material by micromechanical cleavage, fabrication of the prototype and electrical characterization will be discussed in this report. Bachelor of Engineering 2015-05-26T06:28:17Z 2015-05-26T06:28:17Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/64390 en Nanyang Technological University 56 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ngiam, Lee Hui Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title | Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title_full | Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title_fullStr | Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title_full_unstemmed | Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title_short | Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| title_sort | fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/64390 |
| work_keys_str_mv | AT ngiamleehui fabricationandcharacterizationofsemiconductingtransitionmetaldichalcogenidesfieldeffecttransistors |