Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
Direct chip-to-wafer bonding of Indium Phosphide (InP) on Silicon (Si) using Aluminium Oxide (Al2O3) as an intermediate layer has been investigated. Thermal superiority of Al2O3 material over SiO2 as bonding intermediate layer has been demonstrated with respect to thermal dissipation and thermally-i...
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| Format: | Thesis |
| Language: | English |
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2015
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| Online Access: | http://hdl.handle.net/10356/65369 |