Tuning the barrier height at metal/NdNiO3/semiconductor interface
This report contains an overview of recent advances in condensed matter physics and specifically the phenomena of metal-insulator transition and some charge transport models. It outlines the basics of band theory of solids and the conditions where certain central assumptions to the band theory of...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/66346 |
| _version_ | 1811677614763409408 |
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| author | Wong, Walter Pei De |
| author2 | Wang Junling |
| author_facet | Wang Junling Wong, Walter Pei De |
| author_sort | Wong, Walter Pei De |
| collection | NTU |
| description | This report contains an overview of recent advances in condensed matter physics and specifically
the phenomena of metal-insulator transition and some charge transport models. It outlines the
basics of band theory of solids and the conditions where certain central assumptions to the band
theory of solids no longer hold accurate. It also provides an introductory overview of the
characterization techniques that will be utilized in the experiment and a very brief overview of
the studies done on NdNiO3 (NNO) and other similar nickelates systems. Temperature dependent
I-V measurements were taken using a simple two-probe technique from 85K -300K. The
experimental findings strongly indicate that NNO follows a hopping based charge transport
mechanism. While the experiments in this project do not have a complete agreement on the
contributions from thermally activated charge transport mechanism, this could possibly be a
result of unintentional impurity contamination or incomplete ionization of niobium from the
strontium titanate. |
| first_indexed | 2024-10-01T02:40:10Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/66346 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:40:10Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/663462023-03-04T15:38:02Z Tuning the barrier height at metal/NdNiO3/semiconductor interface Wong, Walter Pei De Wang Junling School of Materials Science and Engineering DRNTU::Engineering This report contains an overview of recent advances in condensed matter physics and specifically the phenomena of metal-insulator transition and some charge transport models. It outlines the basics of band theory of solids and the conditions where certain central assumptions to the band theory of solids no longer hold accurate. It also provides an introductory overview of the characterization techniques that will be utilized in the experiment and a very brief overview of the studies done on NdNiO3 (NNO) and other similar nickelates systems. Temperature dependent I-V measurements were taken using a simple two-probe technique from 85K -300K. The experimental findings strongly indicate that NNO follows a hopping based charge transport mechanism. While the experiments in this project do not have a complete agreement on the contributions from thermally activated charge transport mechanism, this could possibly be a result of unintentional impurity contamination or incomplete ionization of niobium from the strontium titanate. Bachelor of Engineering (Materials Engineering) 2016-03-30T01:51:59Z 2016-03-30T01:51:59Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/66346 en Nanyang Technological University 56 p. application/pdf |
| spellingShingle | DRNTU::Engineering Wong, Walter Pei De Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title | Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title_full | Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title_fullStr | Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title_full_unstemmed | Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title_short | Tuning the barrier height at metal/NdNiO3/semiconductor interface |
| title_sort | tuning the barrier height at metal ndnio3 semiconductor interface |
| topic | DRNTU::Engineering |
| url | http://hdl.handle.net/10356/66346 |
| work_keys_str_mv | AT wongwalterpeide tuningthebarrierheightatmetalndnio3semiconductorinterface |