Non-volatile logic & memory based on STT-MTJ and SOT-MTJ devices
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods facing the limits of scalability and read/write efficiency, alternative methods of switching needs to be investigated. In this work, two current-driven switching methods, spin transfer torque (STT)...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/10356/66903 |