Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition
Diamond has many attractive properties such as high hardness, good durability and excellence heat conductivity. The diamond synthesis technique has become a popular topic to research because of diamond`s rareness and useful. Plasma enhances chemical vapour deposition (PECVD) is one of the popular me...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/67303 |
| _version_ | 1811688559801794560 |
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| author | Wang, Shancheng |
| author2 | Christian Leo Kloc |
| author_facet | Christian Leo Kloc Wang, Shancheng |
| author_sort | Wang, Shancheng |
| collection | NTU |
| description | Diamond has many attractive properties such as high hardness, good durability and excellence heat conductivity. The diamond synthesis technique has become a popular topic to research because of diamond`s rareness and useful. Plasma enhances chemical vapour deposition (PECVD) is one of the popular method for diamond synthesis. It produces high quality diamond and relatively easy to control. The basic mechanism for PECVD was investigated. And the choosing of precursor, the role of different gas, and the effect of parameter changing to diamond deposition were reviewed and discussed. Previoous literatures mainly utilized high power microwave source to generate plasma. The power for high power microwave source is usually 3~4kW. The case and data for low power microwave assisted PECVD is relatively lack. In this experiment, a self-designed low power microwave PECVD system was used to deposited boron doped diamond thin film. The deposited sample was characterized with optical microscopy, SEM, XRD, confocal Raman spectroscopy and Keithley semiconductor characterization system. The morphology, XRD spectrum, Raman spectrum and electrical properties were measured. Experiment results showed that the deposited diamond thin film has a conductivity of 0.0631 Ohm per meter, which is lower than intrinsic diamond. Some phenomenon and effect observed during experiment were discussed, such as relationship between carbon concentration and diamond morphology. A set of optimum deposition parameter was given. The data can be served as guide or suggestion for further synthesis. |
| first_indexed | 2024-10-01T05:34:08Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/67303 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:34:08Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/673032023-03-04T15:36:03Z Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition Wang, Shancheng Christian Leo Kloc School of Materials Science and Engineering DRNTU::Engineering::Materials::Plasma treatment Diamond has many attractive properties such as high hardness, good durability and excellence heat conductivity. The diamond synthesis technique has become a popular topic to research because of diamond`s rareness and useful. Plasma enhances chemical vapour deposition (PECVD) is one of the popular method for diamond synthesis. It produces high quality diamond and relatively easy to control. The basic mechanism for PECVD was investigated. And the choosing of precursor, the role of different gas, and the effect of parameter changing to diamond deposition were reviewed and discussed. Previoous literatures mainly utilized high power microwave source to generate plasma. The power for high power microwave source is usually 3~4kW. The case and data for low power microwave assisted PECVD is relatively lack. In this experiment, a self-designed low power microwave PECVD system was used to deposited boron doped diamond thin film. The deposited sample was characterized with optical microscopy, SEM, XRD, confocal Raman spectroscopy and Keithley semiconductor characterization system. The morphology, XRD spectrum, Raman spectrum and electrical properties were measured. Experiment results showed that the deposited diamond thin film has a conductivity of 0.0631 Ohm per meter, which is lower than intrinsic diamond. Some phenomenon and effect observed during experiment were discussed, such as relationship between carbon concentration and diamond morphology. A set of optimum deposition parameter was given. The data can be served as guide or suggestion for further synthesis. Bachelor of Engineering (Materials Engineering) 2016-05-15T01:11:42Z 2016-05-15T01:11:42Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/67303 en Nanyang Technological University 38 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Plasma treatment Wang, Shancheng Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title | Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title_full | Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title_fullStr | Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title_full_unstemmed | Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title_short | Synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| title_sort | synthesis of boron doped continuous diamond film by microwave assisted plasma enhanced chemical vapour deposition |
| topic | DRNTU::Engineering::Materials::Plasma treatment |
| url | http://hdl.handle.net/10356/67303 |
| work_keys_str_mv | AT wangshancheng synthesisofborondopedcontinuousdiamondfilmbymicrowaveassistedplasmaenhancedchemicalvapourdeposition |