Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure

Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure

The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.

Bibliographic Details
Main Author: Lee, Yong Kuen.
Other Authors: School of Materials Science & Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/6785
Description
Summary:The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.

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