Transparent conductive thin film
Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transp...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/67948 |
| Summary: | Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The
concentration of gallium was varied from 0 to 5at% to determine the optimal amount
of with respect to sheet resistance. Even though the addition of gallium in zinc oxide
is to improve the sheet resistance of the transparent conducting film, too much
gallium would result in negative effects of the film with annealing temperature was
also taken into account. The GZO films were then annealed in ambient air in a furnace
at 500˚C for 1 hour. All samples yield an average of 80% and above optical
transparency. |
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