Transparent conductive thin film
Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transp...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/67948 |
| _version_ | 1826119300829675520 |
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| author | Seah, Jireh |
| author2 | Tang Xiaohong |
| author_facet | Tang Xiaohong Seah, Jireh |
| author_sort | Seah, Jireh |
| collection | NTU |
| description | Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The
concentration of gallium was varied from 0 to 5at% to determine the optimal amount
of with respect to sheet resistance. Even though the addition of gallium in zinc oxide
is to improve the sheet resistance of the transparent conducting film, too much
gallium would result in negative effects of the film with annealing temperature was
also taken into account. The GZO films were then annealed in ambient air in a furnace
at 500˚C for 1 hour. All samples yield an average of 80% and above optical
transparency. |
| first_indexed | 2024-10-01T04:57:40Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/67948 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:57:40Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/679482023-07-07T16:05:43Z Transparent conductive thin film Seah, Jireh Tang Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transparent conducting film, too much gallium would result in negative effects of the film with annealing temperature was also taken into account. The GZO films were then annealed in ambient air in a furnace at 500˚C for 1 hour. All samples yield an average of 80% and above optical transparency. Bachelor of Engineering 2016-05-23T08:04:45Z 2016-05-23T08:04:45Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/67948 en Nanyang Technological University 41 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Seah, Jireh Transparent conductive thin film |
| title | Transparent conductive thin film |
| title_full | Transparent conductive thin film |
| title_fullStr | Transparent conductive thin film |
| title_full_unstemmed | Transparent conductive thin film |
| title_short | Transparent conductive thin film |
| title_sort | transparent conductive thin film |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/67948 |
| work_keys_str_mv | AT seahjireh transparentconductivethinfilm |