GaN based layer structures for sensor application
In recent years, research on Gallium nitride material is popular among the semiconductor researchers because of its superior physical properties compared to silicon and other semiconductors. GaN has high band gap, high breakdown field strength, high saturation velocity, high chemical and high radiat...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/10356/68175 |