Investigation of tradeoff between switching loss and EMI issue of gate driver with ferrite bead for SiC power module
It is well-known that gate driver design is a trade-off between switching loss and EMI issue. To maximize the high-efficiency, high-frequency benefits of SiC power devices, they need to be driven at high switching speed. However, the increasing dv/dt and di/dt ratios will tend to deteriorate this ki...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/10356/69348 |