Device applications of transition metal oxide thin films
The transition metal oxide thin films are technologically important materials in many fields due to their various properties. The objective of this thesis is to study the electrical and optoelectronic characteristics of the transition metal oxide thin films, including the Hafnium oxide (HfOx), Nicke...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/69411 |
| _version_ | 1826110217731964928 |
|---|---|
| author | Li, Hua Kai |
| author2 | Chen Tupei |
| author_facet | Chen Tupei Li, Hua Kai |
| author_sort | Li, Hua Kai |
| collection | NTU |
| description | The transition metal oxide thin films are technologically important materials in many fields due to their various properties. The objective of this thesis is to study the electrical and optoelectronic characteristics of the transition metal oxide thin films, including the Hafnium oxide (HfOx), Nickel oxide (NiO), and Indium gallium zinc oxide (IGZO) and their potential applications in non-volatile memory, p-n junction, ultraviolet (UV) photodetector, and artificial synapse. All the transition metal oxide thin films in this work are deposited with sputtering or atomic layer deposition techniques, which are fully compatible with the modern complementary-metal-oxide-semiconductor technology. Both the transition metal oxide thin films and the related devices have been characterized by the techniques of transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and current-voltage (I-V) measurement. |
| first_indexed | 2024-10-01T02:31:06Z |
| format | Thesis |
| id | ntu-10356/69411 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:31:06Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/694112023-07-04T16:13:50Z Device applications of transition metal oxide thin films Li, Hua Kai Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The transition metal oxide thin films are technologically important materials in many fields due to their various properties. The objective of this thesis is to study the electrical and optoelectronic characteristics of the transition metal oxide thin films, including the Hafnium oxide (HfOx), Nickel oxide (NiO), and Indium gallium zinc oxide (IGZO) and their potential applications in non-volatile memory, p-n junction, ultraviolet (UV) photodetector, and artificial synapse. All the transition metal oxide thin films in this work are deposited with sputtering or atomic layer deposition techniques, which are fully compatible with the modern complementary-metal-oxide-semiconductor technology. Both the transition metal oxide thin films and the related devices have been characterized by the techniques of transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and current-voltage (I-V) measurement. DOCTOR OF PHILOSOPHY (EEE) 2016-12-28T07:16:44Z 2016-12-28T07:16:44Z 2016 Thesis Li, H. K. (2016). Device applications of transition metal oxide thin films. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/69411 10.32657/10356/69411 en 117 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Li, Hua Kai Device applications of transition metal oxide thin films |
| title | Device applications of transition metal oxide thin films |
| title_full | Device applications of transition metal oxide thin films |
| title_fullStr | Device applications of transition metal oxide thin films |
| title_full_unstemmed | Device applications of transition metal oxide thin films |
| title_short | Device applications of transition metal oxide thin films |
| title_sort | device applications of transition metal oxide thin films |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/69411 |
| work_keys_str_mv | AT lihuakai deviceapplicationsoftransitionmetaloxidethinfilms |