Thermal resistance & conduction resistance analysis of power semiconductor module
Nowadays, the electric power conversion from one form to another is necessary and important in our everyday lives. Out of many power conversion devices, the Insulated Gate Bipolar Transistors (IGBTs) are popular and widely utilized in many applications such as consumer electronics, home appliances,...
Päätekijä: | Aung, Nay Lin |
---|---|
Muut tekijät: | Tang Yi |
Aineistotyyppi: | Final Year Project (FYP) |
Kieli: | English |
Julkaistu: |
2017
|
Aiheet: | |
Linkit: | http://hdl.handle.net/10356/71725 |
Samankaltaisia teoksia
-
Size, composition and thermal induced band gap changing of nanostructured semiconductors
Tekijä: Nay Myo Tun
Julkaistu: (2010) -
Thermal modelling of power semiconductor modules in power electronic applications
Tekijä: Choudhury, K
Julkaistu: (2021) -
Conductivity or resistivity measurement of a conductive media
Tekijä: Yang, Li Feng
Julkaistu: (2009) -
Physical analysis of semiconductors materials and devices
Tekijä: Aung, Myo Sint
Julkaistu: (2012) -
Enhancement of reliability data analysis software
Tekijä: Nay Lin Aung
Julkaistu: (2008)