Current-driven domain wall dynamics in coupled ferromagnetic structures

The manipulation of the magnetic moments in ferromagnetic (FM) layers via various spin torques has enabled the spintronics research community to encode the digital data in low-power, non-volatile memory and logic devices e.g. spin-transfer torque magnetic random-access memory (STT-MRAM). In this the...

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Bibliographic Details
Main Author: Krishnia, Sachin
Other Authors: Lew Wen Siang
Format: Thesis
Language:English
Published: 2018
Subjects:
Online Access:http://hdl.handle.net/10356/73216
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author Krishnia, Sachin
author2 Lew Wen Siang
author_facet Lew Wen Siang
Krishnia, Sachin
author_sort Krishnia, Sachin
collection NTU
description The manipulation of the magnetic moments in ferromagnetic (FM) layers via various spin torques has enabled the spintronics research community to encode the digital data in low-power, non-volatile memory and logic devices e.g. spin-transfer torque magnetic random-access memory (STT-MRAM). In this thesis, current-induced coupled domain wall (DW) dynamics are investigated in both in-plane and perpendicular magnetic anisotropy materials via experimental and micromagnetic simulations. The effect of DW stray field on DW dynamics in a neighbouring NiFe nanowire with in-plane magnetic anisotropy is studied using micromagnetic simulations. The DWs in the multi-nanowire systems are driven by passing spin-polarized currents to one of the nanowire. The phenomenon is made possible due to the magnetostatic coupling between the DWs. The coupling strength between the DWs in two nanowires strongly depends on the chirality of the DWs and the inter-wire spacing. This coupling-induced DW motion further shifts the Walker breakdown limit towards higher current densities. Current-induced magnetization manipulation in antiferromagnetically coupled thin films with perpendicular magnetic anisotropy is investigated experimentally. FM/Ru/FM synthetic antiferromagnetic (SAF) structures are sandwiched between heavy metals to generate the spin-currents via spin Hall effect (SHE) phenomenon. A qualitative method is proposed to determine the spin-orbit torque (SOT) effective fields. The SOT fields in the SAF structures are found to be a vector sum of the individual SOT fields of the two FM layers. The SOT fields were oriented in antiparallel direction to each other in the two FM layers and efficiently modulated by tuning the net areal magnetization of the SAF structure. Furthermore, the current-induced magnetization switching in the SAF structures was achieved with the assistance of RKKY coupling. The DWs in the SAF structures are driven by nanosecond long current pulses. The RKKY exchange torque on the SOT-driven antiferromagnetically coupled Néel DWs can move the Néel DWs with a velocity of ~ 300 m/s at a current density of 1.04×1012 A/m2. The interplay between the SOT and RKKY coupling and its effect on the DWs dynamics are explained via the micromagnetic simulations. In addition, the SAF magnetic memory devices are irradiated by high energy proton beams to investigate the effect of the radiation on the data. In our investigation, the SAF magnetic memory devices are found to be radiation hard and the DW memory devices are still able to perform continuous data writing and reading even after being irradiated by several high energy proton beams. The devices are annealed at different temperatures over a range of time spans in atmosphere and the thermal stability factor (Δ) is calculated for the data retention. The SAF DW memory devices are found to have Δ ≈ 33 at an elevated temperature of T =190' C.
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spelling ntu-10356/732162023-02-28T23:40:40Z Current-driven domain wall dynamics in coupled ferromagnetic structures Krishnia, Sachin Lew Wen Siang School of Physical and Mathematical Sciences DRNTU::Science::Physics The manipulation of the magnetic moments in ferromagnetic (FM) layers via various spin torques has enabled the spintronics research community to encode the digital data in low-power, non-volatile memory and logic devices e.g. spin-transfer torque magnetic random-access memory (STT-MRAM). In this thesis, current-induced coupled domain wall (DW) dynamics are investigated in both in-plane and perpendicular magnetic anisotropy materials via experimental and micromagnetic simulations. The effect of DW stray field on DW dynamics in a neighbouring NiFe nanowire with in-plane magnetic anisotropy is studied using micromagnetic simulations. The DWs in the multi-nanowire systems are driven by passing spin-polarized currents to one of the nanowire. The phenomenon is made possible due to the magnetostatic coupling between the DWs. The coupling strength between the DWs in two nanowires strongly depends on the chirality of the DWs and the inter-wire spacing. This coupling-induced DW motion further shifts the Walker breakdown limit towards higher current densities. Current-induced magnetization manipulation in antiferromagnetically coupled thin films with perpendicular magnetic anisotropy is investigated experimentally. FM/Ru/FM synthetic antiferromagnetic (SAF) structures are sandwiched between heavy metals to generate the spin-currents via spin Hall effect (SHE) phenomenon. A qualitative method is proposed to determine the spin-orbit torque (SOT) effective fields. The SOT fields in the SAF structures are found to be a vector sum of the individual SOT fields of the two FM layers. The SOT fields were oriented in antiparallel direction to each other in the two FM layers and efficiently modulated by tuning the net areal magnetization of the SAF structure. Furthermore, the current-induced magnetization switching in the SAF structures was achieved with the assistance of RKKY coupling. The DWs in the SAF structures are driven by nanosecond long current pulses. The RKKY exchange torque on the SOT-driven antiferromagnetically coupled Néel DWs can move the Néel DWs with a velocity of ~ 300 m/s at a current density of 1.04×1012 A/m2. The interplay between the SOT and RKKY coupling and its effect on the DWs dynamics are explained via the micromagnetic simulations. In addition, the SAF magnetic memory devices are irradiated by high energy proton beams to investigate the effect of the radiation on the data. In our investigation, the SAF magnetic memory devices are found to be radiation hard and the DW memory devices are still able to perform continuous data writing and reading even after being irradiated by several high energy proton beams. The devices are annealed at different temperatures over a range of time spans in atmosphere and the thermal stability factor (Δ) is calculated for the data retention. The SAF DW memory devices are found to have Δ ≈ 33 at an elevated temperature of T =190' C. ​Doctor of Philosophy (SPMS) 2018-01-23T06:33:44Z 2018-01-23T06:33:44Z 2018 Thesis Krishnia, S. (2018). Current-driven domain wall dynamics in coupled ferromagnetic structures. Doctoral thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/73216 10.32657/10356/73216 en 214 p. application/pdf
spellingShingle DRNTU::Science::Physics
Krishnia, Sachin
Current-driven domain wall dynamics in coupled ferromagnetic structures
title Current-driven domain wall dynamics in coupled ferromagnetic structures
title_full Current-driven domain wall dynamics in coupled ferromagnetic structures
title_fullStr Current-driven domain wall dynamics in coupled ferromagnetic structures
title_full_unstemmed Current-driven domain wall dynamics in coupled ferromagnetic structures
title_short Current-driven domain wall dynamics in coupled ferromagnetic structures
title_sort current driven domain wall dynamics in coupled ferromagnetic structures
topic DRNTU::Science::Physics
url http://hdl.handle.net/10356/73216
work_keys_str_mv AT krishniasachin currentdrivendomainwalldynamicsincoupledferromagneticstructures