Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)
For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. However, in the case of high voltage operation with reduced gate length, the high concentration of two-dimensional electron gas (2DEG) obtained in the HEMT...
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| Format: | Thesis |
| Language: | English |
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2018
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| Online Access: | http://hdl.handle.net/10356/76016 |