Deposition and characterization of Bismuth nanofilm by sputtering
Bismuthene, a layer of bismuth atoms, is predicted to be layered semiconductor, while its bulk counterpart is metallic. In this project, fabrication of bismuth thin films under different conditions will be done using the new sputtering system in NTU Nanoelectronics Lab 1 (NEL1) and characterization...
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Format: | Final Year Project (FYP) |
Idioma: | English |
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2019
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Accés en línia: | http://hdl.handle.net/10356/77842 |
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author | Seah, Jeric Tze Jie |
author2 | Tay Beng Kang |
author_facet | Tay Beng Kang Seah, Jeric Tze Jie |
author_sort | Seah, Jeric Tze Jie |
collection | NTU |
description | Bismuthene, a layer of bismuth atoms, is predicted to be layered semiconductor, while its bulk counterpart is metallic. In this project, fabrication of bismuth thin films under different conditions will be done using the new sputtering system in NTU Nanoelectronics Lab 1 (NEL1) and characterization of the nanofilms will also be done using techniques such as Raman spectroscopy and Energy-dispersive X-ray spectroscopy. Atomic force microscopy will also be utilized to measure the thickness of the nanofilms and to ascertain the topology of the sample surface. |
first_indexed | 2024-10-01T03:32:43Z |
format | Final Year Project (FYP) |
id | ntu-10356/77842 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T03:32:43Z |
publishDate | 2019 |
record_format | dspace |
spelling | ntu-10356/778422023-07-07T15:56:29Z Deposition and characterization of Bismuth nanofilm by sputtering Seah, Jeric Tze Jie Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Bismuthene, a layer of bismuth atoms, is predicted to be layered semiconductor, while its bulk counterpart is metallic. In this project, fabrication of bismuth thin films under different conditions will be done using the new sputtering system in NTU Nanoelectronics Lab 1 (NEL1) and characterization of the nanofilms will also be done using techniques such as Raman spectroscopy and Energy-dispersive X-ray spectroscopy. Atomic force microscopy will also be utilized to measure the thickness of the nanofilms and to ascertain the topology of the sample surface. Bachelor of Engineering (Electrical and Electronic Engineering) 2019-06-07T02:31:29Z 2019-06-07T02:31:29Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77842 en Nanyang Technological University 45 p. application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Seah, Jeric Tze Jie Deposition and characterization of Bismuth nanofilm by sputtering |
title | Deposition and characterization of Bismuth nanofilm by sputtering |
title_full | Deposition and characterization of Bismuth nanofilm by sputtering |
title_fullStr | Deposition and characterization of Bismuth nanofilm by sputtering |
title_full_unstemmed | Deposition and characterization of Bismuth nanofilm by sputtering |
title_short | Deposition and characterization of Bismuth nanofilm by sputtering |
title_sort | deposition and characterization of bismuth nanofilm by sputtering |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | http://hdl.handle.net/10356/77842 |
work_keys_str_mv | AT seahjerictzejie depositionandcharacterizationofbismuthnanofilmbysputtering |