A new unified model for channel thermal noise of deep sub-micron RFCMOS
A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349 |
| _version_ | 1826126686557569024 |
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| author | Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny |
| author_sort | Ong, Shih Ni |
| collection | NTU |
| description | A new unified model for circuit simulation is
presented to predict the high frequency channel thermal
noise of deep sub-micron MOSFETs in strong inversion
region. Based on the new channel thermal noise model, the
simulated channel thermal noise spectral densities of the
devices fabricated in a 0.13μm RFCMOS technology process
are compared to the channel noise directly extracted from
RF noise measurements. |
| first_indexed | 2024-10-01T06:56:46Z |
| format | Conference Paper |
| id | ntu-10356/79246 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:56:46Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/792462020-03-07T13:24:43Z A new unified model for channel thermal noise of deep sub-micron RFCMOS Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny School of Electrical and Electronic Engineering IEEE International Symposium on Radio-Frequency Integration Technology (2009 : Singapore) Chartered Semiconductor Manufacturing Ltd DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements. Published version 2010-08-24T08:36:10Z 2019-12-06T13:20:43Z 2010-08-24T08:36:10Z 2019-12-06T13:20:43Z 2009 2009 Conference Paper Ong, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283. https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349 10.1109/RFIT.2009.5383701 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title | A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title_full | A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title_fullStr | A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title_full_unstemmed | A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title_short | A new unified model for channel thermal noise of deep sub-micron RFCMOS |
| title_sort | new unified model for channel thermal noise of deep sub micron rfcmos |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
| url | https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349 |
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