Choice of generation volume models for electron beam induced current computation
The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particula...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/79317 http://hdl.handle.net/10220/6305 |
| _version_ | 1826127073111965696 |
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| author | Ong, Vincent K. S. Kurniawan, Oka. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ong, Vincent K. S. Kurniawan, Oka. |
| author_sort | Ong, Vincent K. S. |
| collection | NTU |
| description | The spatial distribution of the electron-hole pairs
generated by the electron beam is commonly called the generation
volume or interaction volume. The generation volume affects the
electron beam-induced current (EBIC) profile. This effect of the
generation volume on the EBIC profile is particularly true for
regions near to the semiconductor junctions. Mathematical models
have been proposed for use in the computation of EBIC profiles.
Three pear-shaped generation volume distributions were analyzed
by comparing the resulting EBIC profiles to the profile obtained
from the data using theMonte Carlo simulations. The result shows
that the Bonard model gives an EBIC profile that is closest to
the one computed using the Monte Carlo simulation. This result
is easily observed in the first and the second derivatives of the
semilogarithmic EBIC profiles. |
| first_indexed | 2024-10-01T07:02:48Z |
| format | Journal Article |
| id | ntu-10356/79317 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:02:48Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/793172020-03-07T13:57:22Z Choice of generation volume models for electron beam induced current computation Ong, Vincent K. S. Kurniawan, Oka. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particularly true for regions near to the semiconductor junctions. Mathematical models have been proposed for use in the computation of EBIC profiles. Three pear-shaped generation volume distributions were analyzed by comparing the resulting EBIC profiles to the profile obtained from the data using theMonte Carlo simulations. The result shows that the Bonard model gives an EBIC profile that is closest to the one computed using the Monte Carlo simulation. This result is easily observed in the first and the second derivatives of the semilogarithmic EBIC profiles. Published version 2010-08-13T04:40:24Z 2019-12-06T13:22:24Z 2010-08-13T04:40:24Z 2019-12-06T13:22:24Z 2009 2009 Journal Article Kurniawan, O., & Ong, K. S. (2009). Choice of generation volume models for electron beam induced current computation. IEEE Transactions on Electron Devices. 56(5), 1094-1099. 0018-9383 https://hdl.handle.net/10356/79317 http://hdl.handle.net/10220/6305 10.1109/TED.2009.2015159 en IEEE transactions on electron devices © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Ong, Vincent K. S. Kurniawan, Oka. Choice of generation volume models for electron beam induced current computation |
| title | Choice of generation volume models for electron beam induced current computation |
| title_full | Choice of generation volume models for electron beam induced current computation |
| title_fullStr | Choice of generation volume models for electron beam induced current computation |
| title_full_unstemmed | Choice of generation volume models for electron beam induced current computation |
| title_short | Choice of generation volume models for electron beam induced current computation |
| title_sort | choice of generation volume models for electron beam induced current computation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/79317 http://hdl.handle.net/10220/6305 |
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