Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate
In this study, we report the characterization of thin-film GaAsgrown on germanium-on-insulator (GeOI) on Si substrate. A GaAs/GeOI diode with a 600 nm buffer layer showed a rectification of 1.0 × 107 at ±2 V and had an electrical performance similar to that of the reference sample grown on GaAs subs...
Main Authors: | Chia, Ching Kean, Xu, Z., Yoon, S. F., Yeo, Y. C., Cheng, Y. B., Dalapati, G. K. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/79482 http://hdl.handle.net/10220/18862 |
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