Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects
The effects of the surface roughness and applied loads on the specific electrical contact resistance of three-dimensional Cu–Cu bonded interconnects have been quantitatively investigated. Wafer-level thermocompression bonding was carried out on bonded Cu layers with either different surface roughnes...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/79638 http://hdl.handle.net/10220/8163 |
| _version_ | 1811686766993735680 |
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| author | Made, Riko I. Thompson, Carl V. Leong, H. L. Li, H. Y. Gan, Chee Lip Pey, Kin Leong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Made, Riko I. Thompson, Carl V. Leong, H. L. Li, H. Y. Gan, Chee Lip Pey, Kin Leong |
| author_sort | Made, Riko I. |
| collection | NTU |
| description | The effects of the surface roughness and applied loads on the specific electrical contact resistance of three-dimensional Cu–Cu bonded interconnects have been quantitatively investigated. Wafer-level thermocompression bonding was carried out on bonded Cu layers with either different surface roughness at a certain load or with similar surface roughness at different applied loads. Experimental results show that as the surface roughness of the Cu bonding layer increases or as the bonding load decreases, the specific contact resistance of the bonded interconnects increases. A model is presented which quantifies the relationship between the specific contact resistance and the true contact area (which is a function of the surface roughness and applied load). Through the true contact area, the integrity of a bonded interface may be predicted from the electrical measurement of the contact resistance. |
| first_indexed | 2024-10-01T05:05:39Z |
| format | Journal Article |
| id | ntu-10356/79638 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:05:39Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/796382023-07-14T15:50:08Z Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects Made, Riko I. Thompson, Carl V. Leong, H. L. Li, H. Y. Gan, Chee Lip Pey, Kin Leong School of Materials Science & Engineering DRNTU::Engineering::Materials::Material testing and characterization The effects of the surface roughness and applied loads on the specific electrical contact resistance of three-dimensional Cu–Cu bonded interconnects have been quantitatively investigated. Wafer-level thermocompression bonding was carried out on bonded Cu layers with either different surface roughness at a certain load or with similar surface roughness at different applied loads. Experimental results show that as the surface roughness of the Cu bonding layer increases or as the bonding load decreases, the specific contact resistance of the bonded interconnects increases. A model is presented which quantifies the relationship between the specific contact resistance and the true contact area (which is a function of the surface roughness and applied load). Through the true contact area, the integrity of a bonded interface may be predicted from the electrical measurement of the contact resistance. Published version 2012-05-29T05:57:07Z 2019-12-06T13:29:53Z 2012-05-29T05:57:07Z 2019-12-06T13:29:53Z 2009 2009 Journal Article Leong, H. L., Gan, C. L., Made, R. I., Thompson, C. V., Pey, K. L,. & Li, H. Y. (2009). Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects. Journal of Applied Physics, 105(3). https://hdl.handle.net/10356/79638 http://hdl.handle.net/10220/8163 10.1063/1.3074503 142288 en Journal of applied physics © 2009 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at DOI: [http://link.aip.org.ezlibproxy1.ntu.edu.sg/link/doi/10.1063/1.3074503]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Material testing and characterization Made, Riko I. Thompson, Carl V. Leong, H. L. Li, H. Y. Gan, Chee Lip Pey, Kin Leong Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title | Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title_full | Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title_fullStr | Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title_full_unstemmed | Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title_short | Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects |
| title_sort | experimental characterization and modeling of the contact resistance of cu cu bonded interconnects |
| topic | DRNTU::Engineering::Materials::Material testing and characterization |
| url | https://hdl.handle.net/10356/79638 http://hdl.handle.net/10220/8163 |
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