250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT
A unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provide...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/79826 http://hdl.handle.net/10220/12219 |
| _version_ | 1826113186953166848 |
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| author | Thein, Than Tun Law, Choi Look Fu, Kai |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Thein, Than Tun Law, Choi Look Fu, Kai |
| author_sort | Thein, Than Tun |
| collection | NTU |
| description | A unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provided to develop a compact unilateral circuit model. The model is intended to predict input reflection, forward transmission and output reflection coefficients over wide range of frequencies. The technique is validated by transforming bilateral a small signal model of 3 x 3 μm x 40 μm, InGaP/GaAs HBT into its unilateral equivalent over the frequency range of 250 MHz to 30 GHz. The accuracy of the technique is corroborated at various bias conditions; collector current from 3 mA to 150 mA and collector-emitter voltage from 1 V to 5 V. Simulated results show very good agreement between small signal responses of transformed unilateral and bilateral circuit models. |
| first_indexed | 2024-10-01T03:19:26Z |
| format | Journal Article |
| id | ntu-10356/79826 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:19:26Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/798262020-03-07T13:57:24Z 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT Thein, Than Tun Law, Choi Look Fu, Kai School of Electrical and Electronic Engineering Research Techno Plaza DRNTU::Engineering::Electrical and electronic engineering A unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provided to develop a compact unilateral circuit model. The model is intended to predict input reflection, forward transmission and output reflection coefficients over wide range of frequencies. The technique is validated by transforming bilateral a small signal model of 3 x 3 μm x 40 μm, InGaP/GaAs HBT into its unilateral equivalent over the frequency range of 250 MHz to 30 GHz. The accuracy of the technique is corroborated at various bias conditions; collector current from 3 mA to 150 mA and collector-emitter voltage from 1 V to 5 V. Simulated results show very good agreement between small signal responses of transformed unilateral and bilateral circuit models. Published version 2013-07-25T05:56:22Z 2019-12-06T13:34:51Z 2013-07-25T05:56:22Z 2019-12-06T13:34:51Z 2012 2012 Journal Article Thein, T. T., Law, C. L., & Fu, K. (2012). 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT. Progress In Electromagnetics Research C, 26, 1-12. 1937-8718 https://hdl.handle.net/10356/79826 http://hdl.handle.net/10220/12219 10.2528/PIERC11101702 en Progress In electromagnetics research C © 2012 EMW Publishing. This paper was published in Progress In Electromagnetics Research C and is made available as an electronic reprint (preprint) with permission of EMW Publishing. The paper can be found at the following official DOI: [http://dx.doi.org/10.2528/PIERC11101702]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Thein, Than Tun Law, Choi Look Fu, Kai 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title | 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title_full | 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title_fullStr | 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title_full_unstemmed | 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title_short | 250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT |
| title_sort | 250 mhz to 30 ghz unilateral circuitmodel for ingap gaas hbt |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/79826 http://hdl.handle.net/10220/12219 |
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