Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface
Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoe...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79990 http://hdl.handle.net/10220/7697 |
| Summary: | Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is
generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam
(EB) treatment was investigated by four-point bending test, x-ray photoelectron spectroscopy, and
density functional theory. Higher adhesion energy (Gc) was achieved with low-dose EB treatment,
attributed to the strong Ta-arene interaction. However, high-dose EB breaks the aromatic rings
partially, resulting in fewer available sites for Ta-arene bonding, leading to lower adhesion. It is
suggested that the amount of carbon atoms involved in bonding with the metal is the key to improve
the Ta/polymer adhesion. |
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