Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

Bibliographic Details
Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/80001
http://hdl.handle.net/10220/13359
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author Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Wei
Ju, Zhengang
Zheng, Ke
Kyaw, Zabu
Ji, Yun
Hasanov, Namig
Sun, Xiaowei
Demir, Hilmi Volkan
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Wei
Ju, Zhengang
Zheng, Ke
Kyaw, Zabu
Ji, Yun
Hasanov, Namig
Sun, Xiaowei
Demir, Hilmi Volkan
author_sort Zhang, Zi-Hui
collection NTU
description The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
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institution Nanyang Technological University
language English
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spelling ntu-10356/800012020-03-07T13:57:23Z Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)]. Published version 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013 2013 Journal Article Zhang, Z.-H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata. Optics express, 21(15), 17670. 1094-4087 https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359 10.1364/OE.21.017670 en Optics express © 2013 OSA. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of OSA. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.21.017670].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
spellingShingle Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Wei
Ju, Zhengang
Zheng, Ke
Kyaw, Zabu
Ji, Yun
Hasanov, Namig
Sun, Xiaowei
Demir, Hilmi Volkan
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_full Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_fullStr Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_full_unstemmed Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_short Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_sort improved ingan gan light emitting diodes with a p gan n gan p gan n gan p gan current spreading layer errata
url https://hdl.handle.net/10356/80001
http://hdl.handle.net/10220/13359
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