Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359 |
| _version_ | 1826118299706982400 |
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| author | Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)]. |
| first_indexed | 2024-10-01T04:41:27Z |
| format | Journal Article |
| id | ntu-10356/80001 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:41:27Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/800012020-03-07T13:57:23Z Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)]. Published version 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013 2013 Journal Article Zhang, Z.-H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata. Optics express, 21(15), 17670. 1094-4087 https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359 10.1364/OE.21.017670 en Optics express © 2013 OSA. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of OSA. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.21.017670]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title_full | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title_fullStr | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title_full_unstemmed | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title_short | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata |
| title_sort | improved ingan gan light emitting diodes with a p gan n gan p gan n gan p gan current spreading layer errata |
| url | https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359 |
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