Resistive switching memories in MoS2 nanosphere assemblies
A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RE...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993 |
| _version_ | 1826118873551732736 |
|---|---|
| author | Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo |
| author_sort | Xu, Xiao-Yong |
| collection | NTU |
| description | A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers. |
| first_indexed | 2024-10-01T04:50:38Z |
| format | Journal Article |
| id | ntu-10356/80057 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:50:38Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/800572023-07-14T15:49:18Z Resistive switching memories in MoS2 nanosphere assemblies Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo School of Materials Science & Engineering DRNTU::Engineering::Materials A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers. Published version 2014-03-27T06:50:01Z 2019-12-06T13:39:39Z 2014-03-27T06:50:01Z 2019-12-06T13:39:39Z 2014 2014 Journal Article Xu, X.-Y., Yin, Z.-Y., Xu, C.-X., Dai, J., & Hu, J. G. (2014). Resistive switching memories in MoS2 nanosphere assemblies. Applied Physics Letters, 104(3), 033504-. https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993 10.1063/1.4862755 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862755]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo Resistive switching memories in MoS2 nanosphere assemblies |
| title | Resistive switching memories in MoS2 nanosphere assemblies |
| title_full | Resistive switching memories in MoS2 nanosphere assemblies |
| title_fullStr | Resistive switching memories in MoS2 nanosphere assemblies |
| title_full_unstemmed | Resistive switching memories in MoS2 nanosphere assemblies |
| title_short | Resistive switching memories in MoS2 nanosphere assemblies |
| title_sort | resistive switching memories in mos2 nanosphere assemblies |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993 |
| work_keys_str_mv | AT xuxiaoyong resistiveswitchingmemoriesinmos2nanosphereassemblies AT yinzongyou resistiveswitchingmemoriesinmos2nanosphereassemblies AT xuchunxiang resistiveswitchingmemoriesinmos2nanosphereassemblies AT daijun resistiveswitchingmemoriesinmos2nanosphereassemblies AT hujingguo resistiveswitchingmemoriesinmos2nanosphereassemblies |