Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are re...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/80395 http://hdl.handle.net/10220/41417 |
| _version_ | 1811691331271000064 |
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| author | Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan |
| author_sort | Jiang, Jize |
| collection | NTU |
| description | Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design
techniques against said TID effect are recommended. |
| first_indexed | 2024-10-01T06:18:11Z |
| format | Conference Paper |
| id | ntu-10356/80395 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:18:11Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/803952020-09-26T22:15:48Z Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan School of Electrical and Electronic Engineering 2016 IEEE International Symposium on Circuits and Systems (ISCAS) Temasek Laboratories MOSFET Leakage currents Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended. Accepted version 2016-09-02T07:00:04Z 2019-12-06T13:48:30Z 2016-09-02T07:00:04Z 2019-12-06T13:48:30Z 2016 2016 Conference Paper Jiang, J., Shu, W., Chong, K.-S., Lin, T., Lwin, N. K. Z., Chang, J. S., et al. (2016). Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process. 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 6-8. https://hdl.handle.net/10356/80395 http://hdl.handle.net/10220/41417 10.1109/ISCAS.2016.7527156 192455 en © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/ISCAS.2016.7527156. 4 p. application/pdf |
| spellingShingle | MOSFET Leakage currents Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title_full | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title_fullStr | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title_full_unstemmed | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title_short | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process |
| title_sort | total ionizing dose tid effects on finger transistors in a 65nm cmos process |
| topic | MOSFET Leakage currents |
| url | https://hdl.handle.net/10356/80395 http://hdl.handle.net/10220/41417 |
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