Whole field curvature and residual stress determination of silicon wafers by reflectometry
Reflectometry, a simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been improved to certain extend. The similar system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré,...
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| Format: | Conference Paper |
| Language: | English |
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2017
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| Online Access: | https://hdl.handle.net/10356/80599 http://hdl.handle.net/10220/42172 |
| _version_ | 1824454227622100992 |
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| author | Ng, Chi Seng Asundi, Anand Krishna |
| author2 | Postek, Michael T. |
| author_facet | Postek, Michael T. Ng, Chi Seng Asundi, Anand Krishna |
| author_sort | Ng, Chi Seng |
| collection | NTU |
| description | Reflectometry, a simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been improved to certain extend. The similar system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure surface profile, slope and curvature. In our previous paper, "Stress Measurement of thin wafer using Reflection Grating Method", the surface curvature and residual stresses were evaluated using the versatility of the proposed system.. The curvature of wafers due to the deposition of backside metallization was evaluated and compared with a commercially stress measurement system from KLA-Tencor. In this paper, some aspects of the work are extended. Our proposed system is calibrated using a reference flat mirror and spherical mirror certified by Zygo Corporation. The mirrors together with the camera calibration toolbox allow the system to acquire measurement accuracy that is demanded by semiconductor industry. Finally, the results obtained from Reflectometry are compared and contrast with results from KLA Tencor System. |
| first_indexed | 2025-02-19T03:18:58Z |
| format | Conference Paper |
| id | ntu-10356/80599 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:18:58Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/805992023-03-04T17:08:06Z Whole field curvature and residual stress determination of silicon wafers by reflectometry Ng, Chi Seng Asundi, Anand Krishna Postek, Michael T. School of Mechanical and Aerospace Engineering Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V Reflectometry Curvature measurement Reflectometry, a simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been improved to certain extend. The similar system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure surface profile, slope and curvature. In our previous paper, "Stress Measurement of thin wafer using Reflection Grating Method", the surface curvature and residual stresses were evaluated using the versatility of the proposed system.. The curvature of wafers due to the deposition of backside metallization was evaluated and compared with a commercially stress measurement system from KLA-Tencor. In this paper, some aspects of the work are extended. Our proposed system is calibrated using a reference flat mirror and spherical mirror certified by Zygo Corporation. The mirrors together with the camera calibration toolbox allow the system to acquire measurement accuracy that is demanded by semiconductor industry. Finally, the results obtained from Reflectometry are compared and contrast with results from KLA Tencor System. Published version 2017-03-16T03:39:28Z 2019-12-06T13:52:59Z 2017-03-16T03:39:28Z 2019-12-06T13:52:59Z 2011 Conference Paper Ng, C. S., & Asundi, A. K. (2011). Whole field curvature and residual stress determination of silicon wafers by reflectometry. Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V, 81050N-. https://hdl.handle.net/10356/80599 http://hdl.handle.net/10220/42172 10.1117/12.894396 en © 2011 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Proceedings of SPIE - Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/12.894396]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf |
| spellingShingle | Reflectometry Curvature measurement Ng, Chi Seng Asundi, Anand Krishna Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title | Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title_full | Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title_fullStr | Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title_full_unstemmed | Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title_short | Whole field curvature and residual stress determination of silicon wafers by reflectometry |
| title_sort | whole field curvature and residual stress determination of silicon wafers by reflectometry |
| topic | Reflectometry Curvature measurement |
| url | https://hdl.handle.net/10356/80599 http://hdl.handle.net/10220/42172 |
| work_keys_str_mv | AT ngchiseng wholefieldcurvatureandresidualstressdeterminationofsiliconwafersbyreflectometry AT asundianandkrishna wholefieldcurvatureandresidualstressdeterminationofsiliconwafersbyreflectometry |