InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However...

Full description

Bibliographic Details
Main Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
Electrons
Current density
Multiple quantum wells
Light emitting diodes
Polarization
Online Access:https://hdl.handle.net/10356/81199
http://hdl.handle.net/10220/39209

Internet

https://hdl.handle.net/10356/81199
http://hdl.handle.net/10220/39209

Similar Items