The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction

The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction

We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...

書目詳細資料
Main Authors:	Zheng, K., Sun, Xiao Wei, Teo, K. L.
其他作者:	School of Electrical and Electronic Engineering
格式:	Journal Article
語言:	English
出版:	2015
主題:	Heterojunction Interface Filament Resistive switching Intrinsic defects
在線閱讀:	https://hdl.handle.net/10356/81343 http://hdl.handle.net/10220/39214

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