Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device
The diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conduct...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/81448 http://hdl.handle.net/10220/40786 |
| _version_ | 1811683488545374208 |
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| author | Han, Yong Lau, Boon Long Zhang, Xiaowu Leong, Yoke Choy Choo, Kok Fah |
| author2 | Temasek Laboratories |
| author_facet | Temasek Laboratories Han, Yong Lau, Boon Long Zhang, Xiaowu Leong, Yoke Choy Choo, Kok Fah |
| author_sort | Han, Yong |
| collection | NTU |
| description | The diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. Two types of simulation models have been constructed in COMSOL, considering the multiphysics features and temperature-dependent material properties. The submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. The heating power, which is concentrated on eight tiny heaters of size 350 × 150 μm2, is varied from 10 to 50 W. With the diamond heat spreader attached to the liquidcooled microchannel heat sink, the maximum heater temperature can be reduced by 11.5%-22.9%, while the maximum gate temperature can be reduced by 8.9%-18.5%. Consistent results from the experimental and simulation studies have verified the enhancement of the hotspot cooling capability using directly attached diamond heat spreader. |
| first_indexed | 2024-10-01T04:13:32Z |
| format | Journal Article |
| id | ntu-10356/81448 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:13:32Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/814482020-09-26T22:17:26Z Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device Han, Yong Lau, Boon Long Zhang, Xiaowu Leong, Yoke Choy Choo, Kok Fah Temasek Laboratories Diamonds Heat sinks Heating Logic gates Microchannel Silicon The diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. Two types of simulation models have been constructed in COMSOL, considering the multiphysics features and temperature-dependent material properties. The submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. The heating power, which is concentrated on eight tiny heaters of size 350 × 150 μm2, is varied from 10 to 50 W. With the diamond heat spreader attached to the liquidcooled microchannel heat sink, the maximum heater temperature can be reduced by 11.5%-22.9%, while the maximum gate temperature can be reduced by 8.9%-18.5%. Consistent results from the experimental and simulation studies have verified the enhancement of the hotspot cooling capability using directly attached diamond heat spreader. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2016-06-23T09:08:02Z 2019-12-06T14:31:12Z 2016-06-23T09:08:02Z 2019-12-06T14:31:12Z 2014 Journal Article Han, Y., Lau, B. L., Zhang, X., Leong, Y. C., & Choo, K. F. (2014). Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device. IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(6), 983-990. 2156-3985 https://hdl.handle.net/10356/81448 http://hdl.handle.net/10220/40786 10.1109/TCPMT.2014.2315234 en IEEE Transactions on Components, Packaging and Manufacturing Technology © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TCPMT.2014.2315234]. 16 p. application/pdf |
| spellingShingle | Diamonds Heat sinks Heating Logic gates Microchannel Silicon Han, Yong Lau, Boon Long Zhang, Xiaowu Leong, Yoke Choy Choo, Kok Fah Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title | Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title_full | Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title_fullStr | Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title_full_unstemmed | Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title_short | Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device |
| title_sort | enhancement of hotspot cooling with diamond heat spreader on cu microchannel heat sink for gan on si device |
| topic | Diamonds Heat sinks Heating Logic gates Microchannel Silicon |
| url | https://hdl.handle.net/10356/81448 http://hdl.handle.net/10220/40786 |
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