Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy
The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-r...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/81515 http://hdl.handle.net/10220/40837 |
| _version_ | 1826126023578615808 |
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| author | Ye, Gang Wang, Hong Ji, Rong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ye, Gang Wang, Hong Ji, Rong |
| author_sort | Ye, Gang |
| collection | NTU |
| description | The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔEV of 0.4 ± 0.2 eV at HfO2/AlN interface was determined by taking AlNsurface band bending into account. By taking the band gap of HfO2 and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO2 and AlN. |
| first_indexed | 2024-10-01T06:46:19Z |
| format | Journal Article |
| id | ntu-10356/81515 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:46:19Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/815152020-03-07T13:57:23Z Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy Ye, Gang Wang, Hong Ji, Rong School of Electrical and Electronic Engineering III-V semiconductors X-ray photoelectron spectroscopy The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔEV of 0.4 ± 0.2 eV at HfO2/AlN interface was determined by taking AlNsurface band bending into account. By taking the band gap of HfO2 and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO2 and AlN. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2016-06-29T05:17:02Z 2019-12-06T14:32:44Z 2016-06-29T05:17:02Z 2019-12-06T14:32:44Z 2016 Journal Article Ye, G., Wang, H., & Ji, R. (2016). Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy. Applied Physics Letters, 108(16), 162103-. 0003-6951 https://hdl.handle.net/10356/81515 http://hdl.handle.net/10220/40837 10.1063/1.4947435 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4947435]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf |
| spellingShingle | III-V semiconductors X-ray photoelectron spectroscopy Ye, Gang Wang, Hong Ji, Rong Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title_full | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title_fullStr | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title_full_unstemmed | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title_short | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy |
| title_sort | band alignment of hfo2 aln heterojunction investigated by x ray photoelectron spectroscopy |
| topic | III-V semiconductors X-ray photoelectron spectroscopy |
| url | https://hdl.handle.net/10356/81515 http://hdl.handle.net/10220/40837 |
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