Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) h...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/81526 http://hdl.handle.net/10220/40856 |
| _version_ | 1811685949874110464 |
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| author | Fan, Zhen Xiao, Juanxiu Wang, Jingxian Zhang, Lei Deng, Jinyu Liu, Ziyan Dong, Zhili Wang, John Chen, Jingsheng |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Fan, Zhen Xiao, Juanxiu Wang, Jingxian Zhang, Lei Deng, Jinyu Liu, Ziyan Dong, Zhili Wang, John Chen, Jingsheng |
| author_sort | Fan, Zhen |
| collection | NTU |
| description | Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories. |
| first_indexed | 2024-10-01T04:52:39Z |
| format | Journal Article |
| id | ntu-10356/81526 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:52:39Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/815262023-07-14T15:49:53Z Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films Fan, Zhen Xiao, Juanxiu Wang, Jingxian Zhang, Lei Deng, Jinyu Liu, Ziyan Dong, Zhili Wang, John Chen, Jingsheng School of Materials Science & Engineering Polarization Ferroelectric thin films Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories. NRF (Natl Research Foundation, S’pore) Published version 2016-06-30T08:03:57Z 2019-12-06T14:32:58Z 2016-06-30T08:03:57Z 2019-12-06T14:32:58Z 2016 Journal Article Fan, Z., Xiao, J., Wang, J., Zhang, L., Deng, J., Liu, Z., et al. (2016). Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films. Applied Physics Letters, 108(23), 232905-. 0003-6951 https://hdl.handle.net/10356/81526 http://hdl.handle.net/10220/40856 10.1063/1.4953461 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4953461]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Polarization Ferroelectric thin films Fan, Zhen Xiao, Juanxiu Wang, Jingxian Zhang, Lei Deng, Jinyu Liu, Ziyan Dong, Zhili Wang, John Chen, Jingsheng Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title | Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title_full | Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title_fullStr | Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title_full_unstemmed | Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title_short | Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films |
| title_sort | ferroelectricity and ferroelectric resistive switching in sputtered hf0 5zr0 5o2 thin films |
| topic | Polarization Ferroelectric thin films |
| url | https://hdl.handle.net/10356/81526 http://hdl.handle.net/10220/40856 |
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