Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations
We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm....
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/81530 http://hdl.handle.net/10220/39576 |
| _version_ | 1824457140589297664 |
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| author | Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
| author_sort | Jia, Bo Wen |
| collection | NTU |
| description | We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω-2θ scan results from x-ray diffraction measurement indicated that the InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm-2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility. |
| first_indexed | 2025-02-19T04:05:16Z |
| format | Journal Article |
| id | ntu-10356/81530 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T04:05:16Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/815302020-03-07T13:57:23Z Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt School of Electrical and Electronic Engineering Epitaxial Growth TEM We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω-2θ scan results from x-ray diffraction measurement indicated that the InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm-2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility. NRF (Natl Research Foundation, S’pore) Accepted version 2016-01-05T09:08:28Z 2019-12-06T14:33:03Z 2016-01-05T09:08:28Z 2019-12-06T14:33:03Z 2015 Journal Article Jia, W. B., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2015). Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations. Materials Letters, 158, 258-261. 0167-577X https://hdl.handle.net/10356/81530 http://hdl.handle.net/10220/39576 10.1016/j.matlet.2015.05.123 en Materials Letters © 2015 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Letters, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.matlet.2015.05.123]. 8 p. application/pdf |
| spellingShingle | Epitaxial Growth TEM Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title_full | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title_fullStr | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title_full_unstemmed | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title_short | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations |
| title_sort | epitaxial growth of low threading dislocation density insb on gaas using self assembled periodic interfacial misfit dislocations |
| topic | Epitaxial Growth TEM |
| url | https://hdl.handle.net/10356/81530 http://hdl.handle.net/10220/39576 |
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