Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82136 http://hdl.handle.net/10220/41135 |
| _version_ | 1826115873826406400 |
|---|---|
| author | Zhang, Zi-Hui Liu, Wei Ju, Zhengang Tan, Swee Tiam Ji, Yun Zhang, Xueliang Wang, Liancheng Kyaw, Zabu Sun, Xiao Wei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Liu, Wei Ju, Zhengang Tan, Swee Tiam Ji, Yun Zhang, Xueliang Wang, Liancheng Kyaw, Zabu Sun, Xiao Wei Demir, Hilmi Volkan |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly. |
| first_indexed | 2024-10-01T04:02:14Z |
| format | Journal Article |
| id | ntu-10356/82136 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:02:14Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/821362023-02-28T19:32:46Z Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency Zhang, Zi-Hui Liu, Wei Ju, Zhengang Tan, Swee Tiam Ji, Yun Zhang, Xueliang Wang, Liancheng Kyaw, Zabu Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays Light emitting diodes Polarization InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2016-08-15T09:27:36Z 2019-12-06T14:47:24Z 2016-08-15T09:27:36Z 2019-12-06T14:47:24Z 2014 Journal Article Zhang, Z.-H., Liu, W., Ju, Z., Tan, S. T., Ji, Y., Zhang, X., et al. (2014). Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency. Applied Physics Letters, 104(25), 251108-. 0003-6951 https://hdl.handle.net/10356/82136 http://hdl.handle.net/10220/41135 10.1063/1.4885421 en Applied Physics Letters © 2014 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: [http://dx.doi.org/10.1063/1.4885421]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Light emitting diodes Polarization Zhang, Zi-Hui Liu, Wei Ju, Zhengang Tan, Swee Tiam Ji, Yun Zhang, Xueliang Wang, Liancheng Kyaw, Zabu Sun, Xiao Wei Demir, Hilmi Volkan Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title | Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title_full | Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title_fullStr | Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title_full_unstemmed | Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title_short | Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency |
| title_sort | polarization self screening in 0001 oriented ingan gan light emitting diodes for improving the electron injection efficiency |
| topic | Light emitting diodes Polarization |
| url | https://hdl.handle.net/10356/82136 http://hdl.handle.net/10220/41135 |
| work_keys_str_mv | AT zhangzihui polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT liuwei polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT juzhengang polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT tansweetiam polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT jiyun polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT zhangxueliang polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT wangliancheng polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT kyawzabu polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT sunxiaowei polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency AT demirhilmivolkan polarizationselfscreeningin0001orientedinganganlightemittingdiodesforimprovingtheelectroninjectionefficiency |