On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS

An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to...

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Main Authors: Liang, Yuan, Yu, Hao, Wen, Jincai, Anak Agung Alit Apriyana, Li, Nan, Luo, Yu, Sun, Lingling
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/82161
http://hdl.handle.net/10220/41153
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author Liang, Yuan
Yu, Hao
Wen, Jincai
Anak Agung Alit Apriyana
Li, Nan
Luo, Yu
Sun, Lingling
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liang, Yuan
Yu, Hao
Wen, Jincai
Anak Agung Alit Apriyana
Li, Nan
Luo, Yu
Sun, Lingling
author_sort Liang, Yuan
collection NTU
description An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance and momentum of other on-chip components with TEM-wave propagation, a mode converter structure featured by a smooth bridge between the Ground coplanar waveguide (GCPW) with 50 Ω impedance and SPP T-line is proposed. To further reduce area, the converter is ultimately simplified to a gradual increment of groove with smooth gradient. The proposed SPP T-lines with the converter is designed and fabricated in the standard 65 nm CMOS process. Both near-field simulation and measurement results show excellent conversion efficiency from quasi-TEM to SPP modes in a broadband frequency range. The converter achieves wideband impedance matching (<−9 dB) with excellent transmission efficiency (averagely −1.9 dB) from 110 GHz–325 GHz. The demonstrated compact and wideband SPP T-lines with mode converter have shown great potentials to replace existing waveguides as future on-chip THz interconnects. To the best of the author’s knowledge, this is the first time to demonstrate the (sub)-THz surface mode conversion on-chip in CMOS technology.
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spelling ntu-10356/821612022-02-16T16:29:59Z On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS Liang, Yuan Yu, Hao Wen, Jincai Anak Agung Alit Apriyana Li, Nan Luo, Yu Sun, Lingling School of Electrical and Electronic Engineering impedance An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance and momentum of other on-chip components with TEM-wave propagation, a mode converter structure featured by a smooth bridge between the Ground coplanar waveguide (GCPW) with 50 Ω impedance and SPP T-line is proposed. To further reduce area, the converter is ultimately simplified to a gradual increment of groove with smooth gradient. The proposed SPP T-lines with the converter is designed and fabricated in the standard 65 nm CMOS process. Both near-field simulation and measurement results show excellent conversion efficiency from quasi-TEM to SPP modes in a broadband frequency range. The converter achieves wideband impedance matching (<−9 dB) with excellent transmission efficiency (averagely −1.9 dB) from 110 GHz–325 GHz. The demonstrated compact and wideband SPP T-lines with mode converter have shown great potentials to replace existing waveguides as future on-chip THz interconnects. To the best of the author’s knowledge, this is the first time to demonstrate the (sub)-THz surface mode conversion on-chip in CMOS technology. Published version 2016-08-17T09:15:49Z 2019-12-06T14:47:46Z 2016-08-17T09:15:49Z 2019-12-06T14:47:46Z 2016 2016 Journal Article Liang, Y., Yu, H., Wen, J., Anak Agung Alit Apriyana, Li, N., Luo, Y., et al. (2016). On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS. Scientific Reports, 6, 30063-. 2045-2322 https://hdl.handle.net/10356/82161 http://hdl.handle.net/10220/41153 10.1038/srep30063 27444782 195096 en Scientific Reports This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ 16 p. application/pdf
spellingShingle impedance
Liang, Yuan
Yu, Hao
Wen, Jincai
Anak Agung Alit Apriyana
Li, Nan
Luo, Yu
Sun, Lingling
On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title_full On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title_fullStr On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title_full_unstemmed On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title_short On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
title_sort on chip sub terahertz surface plasmon polariton transmission lines with mode converter in cmos
topic impedance
url https://hdl.handle.net/10356/82161
http://hdl.handle.net/10220/41153
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