A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers
This paper presents a low-power CMOS receiving signal strength indicator (RSSI). The main architecture of the circuit adopts a six-stage limiting amplifier (LA) in a logarithmic-linear form, which shows a good performance in weak signal detection. The RSSI achieves high tolerance to process, voltage...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82166 http://hdl.handle.net/10220/41138 |
| _version_ | 1826123189480062976 |
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| author | Wang, Keping Lei, Xuemei Ma, Kaixue Yeo, Kiat Seng Cao, Xiang Wang, Zhigong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Keping Lei, Xuemei Ma, Kaixue Yeo, Kiat Seng Cao, Xiang Wang, Zhigong |
| author_sort | Wang, Keping |
| collection | NTU |
| description | This paper presents a low-power CMOS receiving signal strength indicator (RSSI). The main architecture of the circuit adopts a six-stage limiting amplifier (LA) in a logarithmic-linear form, which shows a good performance in weak signal detection. The RSSI achieves high tolerance to process, voltage, and temperature (PVT) variations by utilizing the unique nature of branch currents in a transconductance amplifier. The power consumption is decreased by using the weak-inversion LAs. Full-waveform current rectification and summation are employed in the RSSI circuit to achieve high precision while maintaining low power consumption. Measured results show that in the 1 kHz–50 MHz frequency range, the input dynamic range is wider than 70 dB within ±2 dB linearity error. The chip occupies an area of 0.7 mm2 × 0.3 mm2 using a 0.18-μm CMOS. It draws 1.3 mA from a 1.8 V supply. |
| first_indexed | 2024-10-01T06:00:35Z |
| format | Journal Article |
| id | ntu-10356/82166 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:00:35Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/821662020-03-07T13:57:28Z A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers Wang, Keping Lei, Xuemei Ma, Kaixue Yeo, Kiat Seng Cao, Xiang Wang, Zhigong School of Electrical and Electronic Engineering Low-power CMOS This paper presents a low-power CMOS receiving signal strength indicator (RSSI). The main architecture of the circuit adopts a six-stage limiting amplifier (LA) in a logarithmic-linear form, which shows a good performance in weak signal detection. The RSSI achieves high tolerance to process, voltage, and temperature (PVT) variations by utilizing the unique nature of branch currents in a transconductance amplifier. The power consumption is decreased by using the weak-inversion LAs. Full-waveform current rectification and summation are employed in the RSSI circuit to achieve high precision while maintaining low power consumption. Measured results show that in the 1 kHz–50 MHz frequency range, the input dynamic range is wider than 70 dB within ±2 dB linearity error. The chip occupies an area of 0.7 mm2 × 0.3 mm2 using a 0.18-μm CMOS. It draws 1.3 mA from a 1.8 V supply. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2016-08-16T08:21:37Z 2019-12-06T14:47:54Z 2016-08-16T08:21:37Z 2019-12-06T14:47:54Z 2013 Journal Article Wang, K., Lei, X., Ma, K., Yeo, K. S., Cao, X., & Wang, Z. (2013). A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers. Journal of Circuits, Systems, and Computers, 22(10), 1340034-. 0218-1266 https://hdl.handle.net/10356/82166 http://hdl.handle.net/10220/41138 10.1142/S0218126613400343 en Journal of Circuits, Systems and Computers © 2013 World Scientific Publishing Company. |
| spellingShingle | Low-power CMOS Wang, Keping Lei, Xuemei Ma, Kaixue Yeo, Kiat Seng Cao, Xiang Wang, Zhigong A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title | A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title_full | A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title_fullStr | A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title_full_unstemmed | A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title_short | A CMOS Low-power Temperature-robust RSSI using Weak-inversion Limiting Amplifiers |
| title_sort | cmos low power temperature robust rssi using weak inversion limiting amplifiers |
| topic | Low-power CMOS |
| url | https://hdl.handle.net/10356/82166 http://hdl.handle.net/10220/41138 |
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